S29WS-P Datasheet, PDF (38/89 Pages) SPANSION – 512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory

Data Sheet (Advance Information)
Figure 7.5 Sector Erase Operation
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Unlock Cycle 1
Unlock Cycle 2
Write Sector Erase Cycles:
Address 555h, Data 80h
Address 555h, Data AAh
Address 2AAh, Data 55h
Sector Address, Data 30h
Command Cycle 1
Command Cycle 2
Command Cycle 3
Specify first sector for erasure
No
Select
Additional
Sectors?
Yes
Write Additional
Sector Addresses
No
Poll DQ3.
DQ3 = 1?
Yes
Yes
Last Sector
Selected?
No
• Each additional cycle must be written within t_SEA timeout
• Timeout resets after each additional cycle is written
• The host system may monitor DQ3 or wait t_SEA to ensure
acceptance of erase commands
• No limit on number of sectors
• Commands other than Erase Suspend or selecting
additional sectors for erasure during timeout reset device
to reading array data
Perform Write Operation
Status Algorithm
Status may be obtained by reading DQ7, DQ6 and/or DQ2.
Yes
Done?
No
DQ5 = 1?
No
Yes
Error condition (Exceeded Timing Limits)
PASS. Device returns
to reading array.
FAIL. Write reset command
to return to reading array.
Notes:
1. See Table 12.1 on page 78 for erase command sequence.
2. See the section on DQ3 for information on the sector erase timeout.
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S29WS-P
S29WS-P_00_A7 November 8, 2006