SI8660BA-B-IS1 Datasheet, PDF (9/40 Pages) Silicon Laboratories – LOW POWER SIX-CHANNEL DIGITAL ISOLATOR

Si8660/61/62/63
Table 3. Electrical Characteristics
(V_DD1 = 3.3 V ±10%, V_DD2 = 3.3 V ±10%, T_A = –40 to 125 °C)
Parameter
Symbol Test Condition
Min
Typ Max Unit
VDD Undervoltage Threshold
VDD Undervoltage Threshold
VDD Undervoltage
Hysteresis
VDDUV+
VDDUV–
VDD_HYS
V_DD1, V_DD2 rising
V_DD1, V_DD2 falling
1.95
1.88
50
2.24 2.375
V
2.16 2.325
V
70
95
mV
Positive-Going Input Threshold
VT+
All inputs rising
1.4
1.67
1.9
V
Negative-Going Input Threshold VT–
All inputs falling
1.0
1.23
1.4
V
Input Hysteresis
V_HYS
0.38
0.44 0.50
V
High Level Input Voltage
V_IH
2.0
—
—
V
Low Level Input Voltage
V_IL
—
—
0.8
V
High Level Output Voltage
V_OH
loh = –4 mA V_DD1,V_DD2 – 0.4 3.1
—
V
Low Level Output Voltage
V_OL
lol = 4 mA
—
0.2
0.4
V
Input Leakage Current
I_L
Output Impedance¹
Z_O
—
—
±10
µA
—
50
—

Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50 , ±40%, which is a combination of
the value of the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads
where transmission line effects will be a factor, output pins should be appropriately terminated with controlled
impedance PCB traces.
2. t_PSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at
the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.
Rev. 1.5
9