SI8660BA-B-IS1 Datasheet, PDF (19/40 Pages) Silicon Laboratories – LOW POWER SIX-CHANNEL DIGITAL ISOLATOR

Si8660/61/62/63
Table 7. IEC 60664-1 (VDE 0844 Part 2) Ratings
Parameter
Basic Isolation Group
Installation Classification
Test Conditions
Material Group
Rated Mains Voltages < 150 V_RMS
Rated Mains Voltages < 300 V_RMS
Rated Mains Voltages < 400 V_RMS
Rated Mains Voltages < 600 V_RMS
Specification
NB SOIC-16 WB SOIC-16
I
I
I-IV
I-IV
I-III
I-IV
I-II
I-III
I-II
I-III
Table 8. IEC 60747-5-2 Insulation Characteristics for Si86xxxx*
Parameter
Symbol
Test Condition
Characteristic
WB
SOIC-16
NB SOIC-16
Unit
Maximum Working Insulation
Voltage
Input to Output Test Voltage
V_IORM
V_PR
Method b1
(V_IORM x 1.875 = V_PR, 100%
Production Test, t_m = 1 sec,
Partial Discharge < 5 pC)
1200
2250
630
Vpeak
1182
Transient Overvoltage
Pollution Degree
(DIN VDE 0110, Table 1)
V_IOTM
t = 60 sec
6000
2
6000
2
Vpeak
Insulation Resistance at T_S,
V_IO = 500 V
R_S
>10⁹
>10⁹

*Note: Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of
40/125/21.
Table 9. IEC Safety Limiting Values¹
Parameter
Symbol
Test Condition
Max
Unit
WB SOIC-16 NB SOIC-16
Case Temperature
T_S
150
Safety Input, Output, or
I_S
_JA = 105 °C/W
Supply Current
(NB SOIC-16),
V_I = 5.5 V, T_J = 150 °C,
220
T_A = 25 °C
Device Power
Dissipation²
P_D
415
150
°C
mA
215
415
mW
Notes:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figures 3 and 4.
2. The Si86xx is tested with VDD1 = VDD2 = 5.5 V, T_J = 150 ºC, C_L = 15 pF, input a 150 Mbps 50% duty cycle square
wave.
Rev. 1.5
19