SI5350C-B Datasheet, PDF (7/31 Pages) Silicon Laboratories – FACTORY-PROGRAMMABLE ANY-FREQUENCY CMOS CLOCK GENERATOR

Si5350C-B
Table 8. 27 MHz Crystal Requirements^1,2
Parameter
Symbol
Min
Typ
Max
Unit
Crystal Frequency
f_XTAL
—
27
—
MHz
Load Capacitance
C_L
6
—
12
pF
Equivalent Series Resistance
r_ESR
—
—
150

Crystal Max Drive Level
d_L
100
—
—
µW
Notes:
1. Crystals which require load capacitances of 6, 8, or 10 pF should use the device’s internal load capacitance for
optimum performance. See register 183 bits 7:6. A crystal with a 12 pF load capacitance requirement should use a
combination of the internal 10 pF load capacitance in addition to external 2 pF load capacitance (e.g., by using 4 pF
capacitors on XA and XB).
2. Refer to “AN551: Crystal Selection Guide” for more details.
Table 9. Thermal Characteristics
Parameter
Symbol
Thermal Resistance
Junction to Ambient
_JA
Thermal Resistance
Junction to Case
_JC
Test Condition
Still Air
Still Air
Package
10-MSOP
20-QFN
20-QFN
Value
131
119
16
Unit
°C/W
°C/W
°C/W
Table 10. Absolute Maximum Ratings
Parameter
Symbol Test Condition
Value
Unit
DC Supply Voltage
V_{DD_max}
–0.5 to 3.8
V
VIN_P1-3 Pins P1, P2, P3
–0.5 to 3.8
V
Input Voltage
VIN_P0
P0
–0.5 to (VDD+0.3)
V
VIN_XA/B Pins XA, XB
–0.5 to 1.3 V
V
Junction Temperature
T_J
–55 to 150
°C
Note: Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions specified in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Rev. 1.0
7