SI5350C-B Datasheet, PDF (5/31 Pages) Silicon Laboratories – FACTORY-PROGRAMMABLE ANY-FREQUENCY CMOS CLOCK GENERATOR

Si5350C-B
Table 4. AC Characteristics
(V_DD = 1.8 V ±5%, 2.5 V ±10%, or 3.3 V ±10%, T_A = –40 to 85 °C)
Parameter
Power-Up Time
Powerup Time, PLL Bypass
Mode
Output Enable Time
Output Frequency Transition
Time
Spread Spectrum Frequency
Deviation
Spread Spectrum
Modulation Rate
Symbol
T_RDY
T_BYP
T_OE
Test Condition
From V_DD = V_DDmin to valid
output clock, C_L = 5 pF,
f_CLKn > 1 MHz
From V_DD = V_DDmin to valid
output clock, C_L = 5 pF,
f_CLKn > 1 MHz
From OEB assertion to valid
clock output, C_L = 5 pF, f_CLKn
> 1 MHz
T_FREQ
SS_DEV
f_CLKn > 1 MHz
Down Spread
Selectable in 0.1% steps
SS_{MOD_C}
Min
—
—
—
—
–0.1
30
Typ
2
0.5
—
—
—
31.5
Max
10
1
10
10
–2.5
33
Unit
ms
ms
µs
µs
%
kHz
Table 5. Input Characteristics
(V_DD = 1.8 V ±5%, 2.5 V ±10%, or 3.3 V ±10%, T_A = –40 to 85 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max Units
Crystal Frequency
f_XTAL
25
—
27
MHz
P0-P3 Input Low Voltage
V_{IL_P0-3}
–0.1
—
0.3 x V_DD V
P0-P3 Input High Voltage
V_{IH_P0-3}
V_DD = 2.5 V or 3.3 V 0.7 x V_DD
V_DD = 1.8 V
0.8 x V_DD
—
—
3.60
V
3.60
V
CLKIN Frequency Range
f_CLKIN
10
—
100
MHz
CLKIN Input Low Voltage
V_{IL_CLKIN}
–0.1
—
0.3 x V_DD V
CLKIN Input High Voltage
V_{IH_CLKIN}
0.7 x V_DD
—
3.60
V
Rev. 1.0
5