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SI550 Datasheet, PDF (6/12 Pages) Silicon Laboratories – VOLTAGE-CONTROLLED CRYSTAL OSCILLATOR (VCXO) 10 MHZ TO 1.4 GHZ
Si550
Table 8. Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
Supply Voltage
Input Voltage
Storage Temperature
ESD Sensitivity (HBM, per JESD22-A114)
VDD
VI
TS
ESD
–0.5 to +3.8
–0.5 to VDD + 0.3
–55 to +125
>2500
Volts
Volts
ºC
Volts
Soldering Temperature (lead-free profile)
TPEAK
260
ºC
Soldering Temperature Time @ TPEAK (lead-free profile)
tP
10
seconds
Note: Stresses beyond those listed in Absolute Maximum Ratings may cause permanent damage to the device. Functional
operation or specification compliance is not implied at these conditions.
Table 9. Environmental Compliance
The Si550 meets the following qualification test requirements.
Parameter
Mechanical Shock
Mechanical Vibration
Solderability
Gross & Fine Leak
Resistance to Solvents
Conditions/ Test Method
MIL-STD-883F, Method 2002.3 B
MIL-STD-883F, Method 2007.3 A
MIL-STD-883F, Method 203.8
MIL-STD-883F, Method 1014.7
MIL-STD-883F, Method 2016
6
Preliminary Rev. 0.3