SI4706-C31 Datasheet, PDF (4/36 Pages) Silicon Laboratories – HIGH-PERFORMANCE FM RDS/RBDS RECEIVER

Si4706-C31
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Supply Voltage
Interface Supply Voltage
Power Supply Powerup Rise Time
V_DD
V_IO
V_DDRISE
2.7
—
5.5
V
1.62
—
3.6
V
10
—
—
µs
Interface Power Supply Powerup
Rise Time
V_IORISE
10
—
—
µs
Ambient Temperature
T_A
–20
25
85
C
1. All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at V_DD = 3.3 V and 25 C unless otherwise stated. Parameters are tested in production unless
otherwise stated.
Table 2. Absolute Maximum Ratings^1,2
Parameter
Symbol
Value
Unit
Supply Voltage
V_DD
–0.5 to 5.8
V
Interface Supply Voltage
Input Current³
Input Voltage³
V_IO
–0.5 to 3.9
V
I_IN
10
mA
V_IN
–0.3 to (V_IO + 0.3)
V
Operating Temperature
T_OP
–40 to 95
C
Storage Temperature
RF Input Level⁴
T_STG
–55 to 150
C
0.4
V_pK
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond
recommended operating conditions for extended periods may affect device reliability.
2. The Si4706 device is a high-performance RF integrated circuit with certain pins having an ESD rating of < 2 kV HBM.
Handling and assembly of these devices should only be done at ESD-protected workstations.
3. For input pins DFS, SCLK, SEN, SDIO, RST, RCLK, GPO1, GPO2, and GPO3.
4. At RF input pins FMI and LPI.
4
Rev. 1.0