SI861X Datasheet, PDF (23/38 Pages) Silicon Laboratories – Low-Power Single and Dual-Channel Digital Isolators

Si861x/2x Data Sheet
Electrical Specifications
Table 4.8. IEC 60747-5-5 Insulation Characteristics for Si86xxxx¹
Parameter
Symbol
Test Condition
Characteristic
Unit
WB SOIC-16 NB SOIC-8
Maximum Working
Insulation Voltage
V_IORM
1200
630
Vpeak
Input to Output Test
V_PR
Voltage
Method b1
(V_IORM x 1.875 = VPR, 100%
2250
1182
Vpeak
Production Test, t_m = 1 sec,
Partial Discharge < 5 pC)
Transient Overvolt-
age
V_IOTM
t = 60 sec
6000
6000
Vpeak
Tested per IEC 60065 with surge voltage of 1.2 µs/50 µs
Surge Voltage
V_IOSM
Si86xxxT tested with magnitude 6250 V x 1.6 = 10 kV
6250
—
Vpeak
Si86xxxB/C/D tested with 4000 V
4000
4000
Pollution Degree
2
2
(DIN VDE 0110, Ta-
ble 1)
Insulation Resist-
R_S
ance at T_S, V_IO =
500 V
>10⁹
>10⁹
Ω
Note:
1. Maintenance of the safety data is ensured by protective circuits. The Si86xxxx provides a climate classification of 40/125/21.
Table 4.9. IEC Safety Limiting Values¹
Parameter
Symbol
Test Condition
Max
Unit
WB SOIC-16 NB SOIC-8
Case Temperature
T_S
150
150
°C
Safety Input, Output, or Supply Current
I_S
θ_JA = 140 °C/W (NB SOIC-8)
220
160
mA
100 °C/W (WB SOIC-16)
Device Power Dissipation²
V_I = 5.5 V, T_J = 150 °C, T_A = 25 °C
P_D
150
150
mW
Note:
1. Maximum value allowed in the event of a failure; also see the thermal derating curve in Figure 4.3 (WB SOIC-16) Thermal Derat-
ing Curve, Dependence of Safety Limiting Values with Case Temperature per DIN EN 60747-5-5/VDE 0884-10, as Applies on
page 23 and Figure 4.4 (NB SOIC-8) Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature
per DIN EN 60747-5-5/VDE 0884-10, as Applies on page 23.
2. The Si86xx is tested with VDD1 = VDD2 = 5.5 V; T_J = 150 ºC; C_L = 15 pF, input a 150 Mbps 50% duty cycle square wave.
silabs.com | Smart. Connected. Energy-friendly.
Rev. 1.6 | 22