SI861X Datasheet, PDF (14/38 Pages) Silicon Laboratories – Low-Power Single and Dual-Channel Digital Isolators

Si861x/2x Data Sheet
Electrical Specifications
Table 4.3. Electrical Characteristics¹
Parameter
Symbol
VDD Undervoltage Threshold
VDD_UV+
VDD Undervoltage Threshold
VDD_UV–
VDD Undervoltage Hysteresis
VDD_HYS
Positive-Going Input Threshold
VT+
Negative-Going Input Threshold
VT–
Input Hysteresis
V_HYS
High Level Input Voltage
V_IH
Low Level Input Voltage
V_IL
High Level Output Voltage
V_OH
Low Level Output Voltage
V_OL
Input Leakage Current
Si86xxxB/C/D
I_L
Si86xxxT
Output Impedance²
Z_O
DC Supply Current (All Inputs 0 V or at Supply)
Si8610Bx, Ex
V_DD1
V_DD2
V_DD1
V_DD2
Si8620Bx, Ex
V_DD1
V_DD2
V_DD1
V_DD2
Si8621Bx, Ex
V_DD1
V_DD2
V_DD1
V_DD2
Test Condition
V_DD1, V_DD2 rising
V_DD1, V_DD2 falling
All inputs rising
All inputs falling
loh = –4 mA
lol = 4 mA
V_I = 0(Bx), 1(Ex)
V_I = 0(Bx), 1(Ex)
V_I = 1(Bx), 0(Ex)
V_I = 1(Bx), 0(Ex)
V_I = 0(Bx), 1(Ex)
V_I = 0(Bx), 1(Ex)
V_I = 1(Bx), 0(Ex)
V_I = 1(Bx), 0(Ex)
V_I = 0(Bx), 1(Ex)
V_I = 0(Bx), 1(Ex)
V_I = 1(Bx), 0(Ex)
V_I = 1(Bx), 0(Ex)
Min
1.95
1.88
50
1.4
1.0
0.38
2.0
—
V_DD1, V_DD2 – 0.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Unit
2.24 2.375
V
2.16 2.325
V
70
95
mV
1.67
1.9
V
1.23
1.4
V
0.44 0.50
V
—
—
V
—
0.8
V
3.1
—
V
0.2
0.4
V
—
±10
µA
—
±15
50
—
Ω
0.6
1.2
0.8
1.5
mA
1.8
2.9
0.8
1.5
0.8
1.4
1.4
2.2
mA
3.3
5.3
1.4
2.2
1.2
1.9
1.2
1.9
mA
2.4
3.8
2.4
3.8
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