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SI861X Datasheet, PDF (17/38 Pages) Silicon Laboratories – Low-Power Single and Dual-Channel Digital Isolators
Si861x/2x Data Sheet
Electrical Specifications
Parameter
Symbol
Test Condition
Min
Typ Max Unit
Note:
1. VDD1 = 3.3 V ±10%; VDD2 = 3.3 V ±10%, TA = –40 to 125 °C
2. The nominal output impedance of an isolator driver channel is approximately 50 Ω, ±40%, which is a combination of the value of
the on-chip series termination resistor and channel resistance of the output driver FET. When driving loads where transmission
line effects will be a factor, output pins should be appropriately terminated with controlled-impedance PCB traces.
3. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units operating at the same
supply voltages, load, and ambient temperature.
4. Start-up time is the time period from the application of power to the appearance of valid data at the output.
Table 4.4. Electrical Characteristics1
Parameter
Symbol
VDD Undervoltage Threshold
VDDUV+
VDD Undervoltage Threshold
VDDUV–
VDD Undervoltage Hysteresis
VDDHYS
Positive-Going Input Threshold
VT+
Negative-Going Input Threshold
VT–
Input Hysteresis
VHYS
High Level Input Voltage
VIH
Low Level Input Voltage
VIL
High Level Output Voltage
VOH
Low Level Output Voltage
VOL
Input Leakage Current
Si86xxxB/C/D
IL
Si86xxxT
Output Impedance2
ZO
DC Supply Current (All Inputs 0 V or at Supply)
Si8610Bx, Ex
VDD1
VDD2
VDD1
VDD2
Si8620Bx, Ex
VDD1
VDD2
VDD1
VDD2
Test Condition
VDD1, VDD2 rising
VDD1, VDD2 falling
All inputs rising
All inputs falling
loh = –4 mA
lol = 4 mA
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
Min
1.95
1.88
50
1.6
1.1
0.40
2.0
—
VDD1, VDD2 – 0.4
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Unit
2.24 2.375
V
2.16 2.325
V
70
95
mV
—
1.9
V
—
1.4
V
0.45 0.50
V
—
—
V
—
0.8
V
2.3
—
V
0.2
0.4
V
—
±10
µA
—
±15
50
—
Ω
0.6
1.2
0.8
1.5
mA
1.8
2.9
0.8
1.5
0.8
1.4
1.4
2.2
mA
3.3
5.3
1.4
2.2
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