EFM8SB2 Datasheet, PDF (19/49 Pages) Silicon Laboratories – The EFM8SB2 highlighted features are listed below

Parameter
Input Offset Tempco
Symbol Test Condition
Min
TC_OFF
—
Table 4.13. Programmable Current Reference (IREF0)
EFM8SB2 Data Sheet
Electrical Specifications
Typ
Max
Unit
3.5
—
µV/°C
Parameter
Symbol Conditions
Min
Static Performance
Resolution
N_bits
Output Compliance Range
V_IOUT
Low Power Mode, Source
0
High Current Mode, Source
0
Low Power Mode, Sink
0.3
High Current Mode, Sink
0.8
Integral Nonlinearity
INL
—
Differential Nonlinearity
DNL
—
Offset Error
Full Scale Error
E_OFF
—
E_FS
Low Power Mode, Source
—
High Current Mode, Source
—
Low Power Mode, Sink
—
High Current Mode, Sink
—
Absolute Current Error
Dynamic Performance
E_ABS
Low Power Mode Sourcing 20 µA
—
Output Settling Time to 1/2 LSB
t_SETTLE
—
Startup Time
t_PWR
—
Note:
1. The PCA block may be used to improve IREF0 resolution by PWMing the two LSBs.
Typ
Max
Units
6
bits
—
V_DD – 0.4
V
—
V_DD – 0.8
V
—
V_DD
V
—
V_DD
V
<±0.2
±1.0
LSB
<±0.2
±1.0
LSB
<±0.1
±0.5
LSB
—
±5
%
—
±6
%
—
±8
%
—
±8
%
<±1
±3
%
300
—
ns
1
—
µs
Table 4.14. Port I/O
Parameter
Output High Voltage (High Drive)
Output Low Voltage (High Drive)
Output High Voltage (Low Drive)
Output Low Voltage (Low Drive)
Input High Voltage
Input Low Voltage
Symbol
V_OH
V_OL
V_OH
V_OL
V_IH
V_IL
Test Condition
I_OH = –3 mA
I_OL = 8.5 mA
I_OH = –1 mA
I_OL = 1.4 mA
V_DD = 2.0 to 3.6 V
V_DD = 1.8 to 2.0 V
V_DD = 2.0 to 3.6 V
V_DD = 1.8 to 2.0 V
Min
Typ
Max
Unit
V_DD – 0.7
—
—
V
—
—
0.6
V
V_DD – 0.7
—
—
V
—
—
0.6
V
V_DD – 0.6
—
—
V
0.7 x V_DD
—
—
V
—
—
0.6
V
—
—
0.3 x V_DD
V
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