EFM8SB2 Datasheet, PDF (15/49 Pages) Silicon Laboratories – The EFM8SB2 highlighted features are listed below

EFM8SB2 Data Sheet
Electrical Specifications
Parameter
Symbol Test Condition
Min
Typ
Max
Endurance (Write/Erase Cycles) N_WE
1k
30 k
—
Note:
1. Does not include sequencing time before and after the write/erase operation, which may be multiple SYSCLK cycles.
2. Data Retention Information is published in the Quarterly Quality and Reliability Report.
Units
Cycles
Table 4.5. Power Management Timing
Parameter
Symbol Test Condition
Min
Idle Mode Wake-up Time
t_IDLEWK
2
Suspend Mode Wake-up Time
t_SUS-
CLKDIV = 0x00
—
PENDWK _{Precision Osc.}
CLKDIV = 0x00
—
Low Power Osc.
Sleep Mode Wake-up Time
t_SLEEPWK
—
Table 4.6. Internal Oscillators
Parameter
Symbol Test Condition
Min
High Frequency Oscillator 0 (24.5 MHz)
Oscillator Frequency
f_HFOSC0 Full Temperature and Supply
24
Range
Low Power Oscillator (20 MHz)
Oscillator Frequency
f_LPOSC
Full Temperature and Supply
18
Range
RTC in Self-Oscillate Mode
Oscillator Frequency
f_LFOSC
Bias Off
—
Bias On
—
Table 4.7. Crystal Oscillator
Parameter
Crystal Frequency
Symbol
f_XTAL
Test Condition
Min
0.02
Table 4.8. External Clock Input
Parameter
Symbol Test Condition
Min
External Input CMOS Clock
f_CMOS
0
Frequency (at EXTCLK pin)
External Input CMOS Clock High t_CMOSH
18
Time
External Input CMOS Clock Low t_CMOSL
18
Time
Typ
—
400
1.3
2
Typ
24.5
20
12 ± 5
25 ± 10
Typ
-
Typ
—
—
—
Max
Units
3
SYSCLKs
—
ns
—
µs
—
µs
Max
Unit
25
MHz
22
MHz
—
kHz
—
kHz
Max
Unit
25
MHz
Max
Unit
25
MHz
—
ns
—
ns
silabs.com | Smart. Connected. Energy-friendly.
Rev. 1.1 | 14