EFM8BB2 Datasheet, PDF (19/55 Pages) Silicon Laboratories – The EFM8BB2 highlighted features are listed below

EFM8BB2 Data Sheet
Electrical Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Slope Error
E_M
12 Bit Mode
10 Bit Mode
—
±0.02
±0.1
%
—
±0.06
±0.24
%
Dynamic Performance 10 kHz Sine Wave Input 1 dB below full scale, Max throughput, using AGND pin
Signal-to-Noise
SNR
12 Bit Mode
61
66
—
dB
10 Bit Mode
53
60
—
dB
Signal-to-Noise Plus Distortion
SNDR
12 Bit Mode
61
66
—
dB
10 Bit Mode
53
60
—
dB
Total Harmonic Distortion (Up to
5th Harmonic)
THD
12 Bit Mode
10 Bit Mode
—
71
—
dB
—
70
—
dB
Spurious-Free Dynamic Range
SFDR
12 Bit Mode
—
-79
—
dB
10 Bit Mode
—
-70
—
dB
Note:
1. Absolute input pin voltage is limited by the V_DD supply.
4.1.9 Voltage Reference
Table 4.9. Voltage Reference
Parameter
Internal Fast Settling Reference
Output Voltage
(Full Temperature and Supply
Range)
Temperature Coefficient
Turn-on Time
Power Supply Rejection
External Reference
Input Current
Symbol
Test Condition
V_REFFS
1.65 V Setting
2.4 V Setting, V_DD > 2.6 V
TC_REFFS
t_REFFS
PSRR_REF
FS
I_EXTREF
Sample Rate = 800 ksps; VREF =
3.0 V
Min
1.62
2.35
—
—
—
—
Typ
1.65
2.4
50
—
400
8
Max
Unit
1.68
V
2.45
V
—
ppm/°C
1.5
μs
—
ppm/V
—
μA
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