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SI88240ED-IS Datasheet, PDF (16/48 Pages) Silicon Laboratories – QUAD DIGITAL ISOLATORS WITH DC-DC CONVERTER
Si88x4x
Table 6. VDE 0884-10 Insulation Characteristics*
Parameter
Symbol
Test Condition
Characteristic
Unit
WB SOIC-20
WB SOIC-24
Maximum Working
Insulation Voltage
VIORM
891
V peak
Input to Output Test Voltage
VPR
Method b1
(VIORM x 1.875 = VPR, 100%
Production Test,
tm = 1 sec,
Partial Discharge < 5 pC)
1671
V peak
Transient Overvoltage
VIOTM
t = 60 sec
6000
V peak
Pollution Degree
2
(DIN VDE 0110, Table 1)
Insulation Resistance at TS,
RS
VIO = 500 V
>109

*Note: Maintenance of the safety data is ensured by protective circuits. The Si88xx provides a climate classification of
40/125/21.
Table 7. IEC Safety Limiting Values*
Parameter
Symbol
Test Condition
WB SOIC-20
Case Temperature
TS
150
Safety Input Current
Device Power Dissipation
IS
JA = 55 °C/W (WB SOIC-20),
VDDA = 5.5 V,
PD
TJ = 150 °C, TA = 25 °C
413
2.27
*Note: Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figure 3.
Unit
°C
mA
W
16
Preliminary Rev. 0.6