SI4460-C2A-GM Datasheet, PDF (13/53 Pages) Silicon Laboratories – HIGH-PERFORMANCE, LOW-CURRENT TRANSCEIVER

Si4463/61/60-C
Table 7. Thermal Characteristics
Parameter
Operating Ambient Temperature Range
Thermal Impedance Junction to Ambient*
Junction Temperature Maximum Value*
Storage Temperature Range
*Note: _JA and T_j are based on RF evaluation board measurements.
Symbol
T_A
_JA
T_j
T_STG
Value
–40 to +85
25
+105
–55 to +150
Unit
°C
°C/w
°C
°C
Table 8. Absolute Maximum Ratings
Parameter
Value
Unit
V_DD to GND
Instantaneous V_RF-peak to GND on TX Output Pin
Sustained V_RF-peak to GND on TX Output Pin
Voltage on Analog Inputs
RX Input Power
–0.3, +3.8
–0.3, +8.0
–0.3, +6.5
–0.7, V_DD + 0.3
+10
V
V
V
V
dBm
Note: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device at or beyond these ratings in the operational sections of
the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability. Power Amplifier may be damaged if switched on without proper load or termination connected. TX
matching network design will influence TX V_RF-peak on TX output pin. Caution: ESD sensitive device.
Rev 1.0
13