SI4460-C2A-GM Datasheet, PDF (10/53 Pages) Silicon Laboratories – HIGH-PERFORMANCE, LOW-CURRENT TRANSCEIVER

Si4463/61/60-C
Table 4. Transmitter AC Electrical Characteristics (Continued)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Output Power Variation
(Si4463)
At 20 dBm PA power setting, 915 MHz, ₁₉
20
21 dBm
Class E match, 3.3 V, 25 °C
Output Power Variation
(Si4460)
At 10 dBm PA power setting, 915 MHz, ₉
Class E match, 3.3 V, 25 °C
10 11 dBm
Output Power Variation
(Si4463)
At 20 dBm PA power setting, 169 MHz,
Square Wave match, 3.3 V, 25 °C
18.5
20
21 dBm
Output Power Variation
(Si4460)
At 10 dBm PA power setting, 169 MHz,
Square Wave match, 3.3 V, 25 °C
9.5
TX RF Output Steps
Using switched current match within
P_{RF_OUT} 6 dB of max power using CLE match —
within 6 dB of max power
TX RF Output Level
Variation vs. Temperature
P_{RF_TEMP}
–40 to +85 C
—
10 10.5 dBm
0.25 0.4 dB
2.3 3
dB
TX RF Output Level
Variation vs. Frequency
P_{RF_FREQ}
Measured across 902–928 MHz
— 0.6 1.7 dB
Transmit Modulation
Filtering
BT
Gaussian Filtering Bandwith Time
Product
— 0.5 —
Notes:
1. All minimum and maximum values are guaranteed across the recommended operating conditions of supply voltage and
from –40 to +85 °C unless otherwise stated. All typical values apply at VDD = 3.3 V and 25 °C unless otherwise stated.
2. The maximum data rate is dependent on the XTAL frequency and is calculated as per the formula: Maximum Symbol
Rate = Fxtal/60, where Fxtal is the XTAL frequency (typically 30 MHz).
3. Default API setting for modulation deviation resolution is double the typical value specified.
4. Output power is dependent on matching components and board layout.
10
Rev 1.0