S-8204AAB-TCT1Y Datasheet, PDF (6/34 Pages) Seiko Instruments Inc – BATTERY PROTECTION IC

BATTERY PROTECTION IC FOR 3-SERIES OR 4-SERIES CELL PACK
S-8204A Series
Rev.3.5_00
 Electrical Characteristics
Table 5 (1 / 2)
Item
Symbol
Condition
Detection Voltage
Overcharge detection voltage n
(n = 1, 2, 3, 4)
V_CUn
3.8 V to 4.6 V, adjustable,
50 mV step
Overcharge release voltage n
(n = 1, 2, 3, 4)
V_CLn
Overdischarge detection voltage n
(n = 1, 2, 3, 4)
V_DLn
3.6 V to 4.6 V,
adjustable,
50 mV step
V_CL ≠ V_CU
V_CL = V_CU
2.0 V to 3.0 V, adjustable,
100 mV step
Overdischarge release voltage n
(n = 1, 2, 3, 4)
Discharge overcurrent detection
voltage 1
Discharge overcurrent detection
voltage 2
Load short-circuit detection voltage
Charge overcurrent detection
voltage
Temperature coefficient 1^*1
Temperature coefficient 2^*2
Delay Time Function^*4
CCT pin internal resistance
CDT pin internal resistance
CIT pin internal resistance 1
CIT pin internal resistance 2
CCT pin detection voltage
CDT pin detection voltage
CIT pin detection voltage
Load short-circuit detection
delay time
0 V Battery Charge Function
0 V battery charge starting
charger voltage
0 V battery charge inhibition
battery voltage
Internal Resistance
Resistance between
VMP pin and VDD pin
Resistance between
VMP pin and VSS pin
2.0 V to 3.4 V,
V_DUn adjustable,
100 mV step
V_DL ≠ V_DU
V_DL = V_DU
V_DIOV1 0.05 V to 0.30 V, adjustable
V_DIOV2
V_SHORT
V_CIOV
T_COE1
T_COE2
−
−
−0.25 V to −0.05 V, adjustable
Ta = 0°C to 50°C^*3
Ta = 0°C to 50°C^*3
R_INC
R_IND
R_INI1
R_INI2
V_CCT
V_CDT
V_CIT
t_SHORT
V1 = 4.7 V, V2 = V3 = V4 = 3.5 V
V1 = 1.5 V, V2 = V3 = V4 = 3.5 V
V1 = V2 = V3 = V4 = 3.5 V
V1 = V2 = V3 = V4 = 3.5 V
V_DS = 15.2 V,
V1 = 4.7 V, V2 = V3 = V4 = 3.5 V
V_DS = 12.0 V,
V1 = 1.5 V, V2 = V3 = V4 = 3.5 V
V_DS = 14.0 V,
V1 = V2 = V3 = V4 = 3.5 V
FET gate capacitance = 2000 pF
V_0CHA
V_0INH
0 V battery charge function
"available"
0 V battery charge function
"inhibition"
R_VMD
−
R_VMS
−
(Ta = +25°C unless otherwise specified)
Min.
Typ.
Max.
Unit
Test
Circuit
V_CUn
− 0.025
V_CUn
V_CUn
+ 0.025
V
2
V_CLn
− 0.05
V_CLn
V_CLn
+ 0.05
V
2
V_CLn
− 0.025
V_CLn
V_CLn
+ 0.025
V
2
V_DLn
− 0.08
V_DLn
V_DLn
+ 0.08
V
2
V_DUn
− 0.10
V_DUn
V_DUn
+ 0.10
V
2
V_DUn
− 0.08
V_DUn
V_DUn
+ 0.08
V
2
V_DIOV1
− 0.015
V_DIOV1
V_DIOV1
+ 0.015
V
2
0.4
0.5
0.6
V
2
0.7
1.0
1.3
V
2
V_CIOV
− 0.03
V_CIOV
V_CIOV
+0.03
V
2
−1.0
0
1.0 mV/°C 2
−0.5
0
0.5 mV/°C 2
6.15 8.31 10.2 MΩ
3
615 831 1020 kΩ
3
123
166
204
kΩ
3
12.3 16.6 20.4 kΩ
3
V_DS
V_DS
V_DS
× 0.68 × 0.70 × 0.72
V
3
V_DS
V_DS
V_DS
× 0.68 × 0.70 × 0.72
V
3
V_DS
V_DS
V_DS
× 0.68 × 0.70 × 0.72
V
3
100 300
600
μs
3
−
0.8
1.5
V
4
0.4
0.7
1.1
V
4
0.5
1
1.5
MΩ
5
450 900 1800 kΩ
5
6