HYB514405BJ Datasheet, PDF (9/25 Pages) Siemens Semiconductor Group – 1M x 4-Bit Dynamic RAM

HYB 514405BJ/BJL-50/-60/-70
1M x 4 EDO - DRAM
AC Characteristics (cont’d) ⁵⁾⁶⁾
T_A = 0 to 70 ˚C, V_CC = 5 V ± 10 %, t_T = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
CAS before RAS Refresh Cycle
CAS setup time
t_CSR
10 –
10 –
10 –
ns
CAS hold time
t_CHR
10 –
10 –
10 –
ns
RAS to CAS precharge time
t_RPC
5
–
5
–
5
–
ns
Write to RAS precharge time
t_WRP
10 –
10 –
10 –
ns
Write hold time referenced to
t_WRH
10 –
10 –
10 –
ns
RAS
CAS-before-RAS Counter Test
Cycle
CAS precharge time (CAS-
t_CPT
35 –
40 –
40 –
ns
before-RAS counter test cycle)
Test Mode
Write command setup time
Write command hold time
t_WTS
10 –
10 –
10 –
ns
t_WTH
10 –
10 –
10 –
ns
Capacitance
T_A = 0 to 70 ˚C; V_CC = 5 V ± 10 %; f = 1 MHz
Parameter
Input capacitance (A0 to A9)
Input capacitance (RAS, CAS, WE,OE)
Output capacitance (IO1 to IO4)
Symbol
C_i1
C_i2
C_io
Limit Values
min.
max.
–
5
–
7
–
7
Unit
pF
pF
pF
Semiconductor Group
9