HYB514405BJ Datasheet, PDF (1/25 Pages) Siemens Semiconductor Group – 1M x 4-Bit Dynamic RAM

1M x 4-Bit Dynamic RAM
(Hyper Page Mode (EDO) version)
HYB 514405BJ/BJL-50/-60/-70
Preliminary Information
• 1 048 576 words by 4-bit organization
• 0 to 70 ˚C operating temperature
• Hyper Page Mode - EDO
• Performance:
t_RAC RAS access time
t_CAC CAS access time
t_AA
Access time from address
t_RC
Read/Write cycle time
t_HPC Hyper page mode (EDO)
cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
89 104 124 ns
20 25 30 ns
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 660 mW active (-50 version)
max. 605 mW active (-60 version)
max. 550 mW active (-70 version)
• Standby power dissipation:
11 mW max.standby (TTL)
5.5 mW max.standby (CMOS)
1.1 mW max.standby (CMOS) for Low Power Version
• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
• All inputs and outputs TTL-compatible
• 1024 refresh cycles / 16 ms
• 1024 refresh cycles / 128 ms for Low Power Version
• Plastic Packages: P-SOJ-26/20-5 with 300 mil width
Semiconductor Group
1
5.96