HYB514405BJ Datasheet, PDF (6/25 Pages) Siemens Semiconductor Group – 1M x 4-Bit Dynamic RAM

HYB 514405BJ/BLJ-50/-60/-70
1M x 4 EDO - DRAM
DC Characteristics (cont’d)
T_A = 0 to 70 ˚C, V_SS = 0 V, V_CC = 5 V ± 10 %, t_T = 2 ns
Parameter
Symbol
Limit Values
min.
max.
Average V_CC supply current during
CAS before RAS refresh mode
-50 version
-60 version
-70 version
I_CC6
–
120
–
110
–
100
For Low Power Version only:
I_CC7
–
250
Battery backup current (average power supply
current in battery backup mode):
(CAS = CAS before RAS cycling or 0.2 V,
WE = V_CC – 0.2 V or 0.2 V,
A0 to A10 = V_CC – 0.2 V or 0.2 V;
DI = V_CC – 0.2 V or 0.2 V or open,
t_RC = 125 µs, t_RAS = t_RAS min = 1 µs)
Unit Test
Condition
mA ²⁾⁴⁾
µA –
AC Characteristics ⁵⁾⁶⁾
T_A = 0 to 70 ˚C, V_CC = 5 V ± 10 %, t_T = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
Common Parameters
Random read or write cycle time t_RC
RAS precharge time
t_RP
RAS pulse width
t_RAS
CAS pulse width
t_CAS
Row address setup time
t_ASR
Row address hold time
t_RAH
Column address setup time
t_ASC
Column address hold time
t_CAH
RAS to CAS delay time
t_RCD
RAS to column address delay t_RAD
time
RAS hold time
t_RSH
89 – 104 – 124 – ns
35 – 40 – 50 – ns
50 10k 60 10k 70 10k ns
8
10k 10 10k 12 10k ns
0
–
0
–
0
–
ns
8
–
10 –
10 –
ns
0
–
0
–
0
–
ns
8
–
10 –
12 –
ns
12 37 14 45 14 53 ns
10 25 12 30 12 35 ns
13
15 – 17 – ns
Semiconductor Group
6