HYB314400BJ-50- Datasheet, PDF (9/25 Pages) Siemens Semiconductor Group – 1M x 4-Bit Dynamic RAM

HYB 314400BJ-50/-60
3.3 V 1M × 4 DRAM
AC Characteristics (cont’d) ^{5, 6}
T_A = 0 to 70 °C, V_CC = 3.3 V ± 0.3 V, t_T = 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max. min. max.
CAS-before-RAS Refresh Cycle
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write hold time referenced to RAS
CAS-before-RAS Counter Test Cycle
CAS precharge time
Test Mode
Write command setup time
Write command hold time
t_CSR
10 –
10 –
ns
t_CHR
10 –
10 –
ns
t_RPC
5
–
5
–
ns
t_WRP
10 –
10 –
ns
t_WRH
10 –
10 –
ns
t_CPT
35 –
40 –
ns
t_WTS
10 –
10 –
ns
t_WTH
10 –
10 –
ns
Semiconductor Group
9
1998-10-01