HYB314400BJ-50- Datasheet, PDF (1/25 Pages) Siemens Semiconductor Group – 1M x 4-Bit Dynamic RAM

1M × 4-Bit Dynamic RAM
HYB 314400BJ-50/-60
Advanced Information
• 1 048 576 words by 4-bit organization
• 0 to 70 °C operating temperature
• Fast Page Mode Operation
• Performance:
-50
t_RAC
RAS access time
50
t_CAC
CAS access time
13
t_AA
Access time from address 25
t_RC
Read/Write cycle time
95
t_PC
Fast page mode cycle time 35
-60
60 ns
15 ns
30 ns
110 ns
40 ns
• Fast access and cycle time
Single + 3.3 V (± 0.3 V) supply with a built-in VBB generator
• Low power dissipation
max. 252 mW active (-50 version)
max. 216 mW active (-60 version)
• Standby power dissipation:
7.2 mW max. standby (LVTTL)
3.6 mW max. standby (LVCMOS)
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
• All inputs and outputs LVTTL-compatible
• 1024 refresh cycles / 16 ms
• Plastic Packages: P-SOJ-26/20-2 with 300 mil width
Semiconductor Group
1
1998-10-01