HYB314400BJ-50- Datasheet, PDF (6/25 Pages) Siemens Semiconductor Group – 1M x 4-Bit Dynamic RAM

HYB 314400BJ-50/-60
3.3 V 1M × 4 DRAM
DC Characteristics (cont’d)
T_A = 0 to 70 °C, V_SS = 0 V, V_CC = 3.3 V ± 0.3 V, t_T = 5 ns
Parameter
Symbol
Limit Values
min.
max.
Standby V_CC supply current
(RAS = CAS = WE = V_CC – 0.2 V)
I_CC5
–
1
Average V_CC supply current during
I_CC6
CAS-before-RAS refresh mode
-50 version
–
70
-60 version
–
60
Unit Test
Condition
µA ¹
mA ^{2, 4}
Capacitance
T_A = 0 to 70 °C; V_CC = 3.3 V ± 0.3 V; f = 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A9)
Input capacitance (RAS, CAS, WE, OE)
Output capacitance (IO1 to IO4)
C_I1
–
5
pF
C_I2
–
7
pF
C_IO
–
7
pF
Semiconductor Group
6
1998-10-01