HYB314400BJ-50- Datasheet, PDF (2/25 Pages) Siemens Semiconductor Group – 1M x 4-Bit Dynamic RAM

HYB 314400BJ-50/-60
3.3 V 1M × 4 DRAM
The HYB 314400BJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit.
The HYB 314400BJ utilizes CMOS silicon gate process as well as advances circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 314400BJ to be packed in a standard plastic P-SOJ-26/20 package. This package
size provides high system bit densities and is compatible with commonly used automatic testing and
insertion equipment. System oriented features include single + 3.3 V (± 0.3 V ) power supply, direct
interfacing with high performance logic device families.
Ordering Information
Type
Ordering Code Package
Descriptions
HYB 314400BJ-50 on request
P-SOJ-26/20-2 300 mil 3.3 V DRAM (access time 50 ns)
HYB 314400BJ-60 on request
P-SOJ-26/20-2 300 mil 3.3 V DRAM (access time 60 ns)
Semiconductor Group
2
1998-10-01