HYB5117805BSJ-50-60 Datasheet, PDF (8/23 Pages) Siemens Semiconductor Group – 2M x 8-Bit Dynamic RAM 2k Refresh

HYB 5(3)117805/BSJ-50/-60
2M × 8 EDO-DRAM
AC Characteristics (cont’d) ^{5, 6}
T_A = 0 to 70 °C, V_CC = 5 V ± 10 % / V_CC = 3.3 V ± 0.3 V, t_T = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max. min. max.
Hyper Page Mode (EDO) Read-Modify-Write Cycle
Hyper page mode (EDO) read-write cycle
t_PRWC
58
–
68 –
ns
time
CAS precharge to WE
t_CPWD
41
–
49 –
ns
CAS-before-RAS Refresh Cycle
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write hold time referenced to RAS
t_CSR
10 –
10 –
ns
t_CHR
10 –
10 –
ns
t_RPC
5
–
5
–
ns
t_WRP
10 –
10 –
ns
t_WRH
10 –
10 –
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time (CAS-before-RAS
counter test cycle)
t_CPT
35 – 40 – ns
Test Mode
Write command setup time
Write command hold time
CAS hold time
RAS hold time in test mode
t_WTS
10 –
10 –
ns
t_WTH
10 –
10 –
ns
t_CHRT
30 –
30 –
ns
t_RAHT
30 –
30 –
ns
Semiconductor Group
8
1998-10-01