HYB5117805BSJ-50-60 Datasheet, PDF (5/23 Pages) Siemens Semiconductor Group – 2M x 8-Bit Dynamic RAM 2k Refresh

HYB 5(3)117805/BSJ-50/-60
2M × 8 EDO-DRAM
DC Characteristics (cont’d)
T_A = 0 to 70 °C, V_SS = 0 V, t_T = 2 ns
Parameter
Symbol Limit Values
min.
max.
Average V_CC supply current
I_CC1
-50 ns version
–
80
-60 ns version
–
70
(RAS, CAS, address cycling: t_RC = t_{RC MIN.})
Standby V_CC supply current (RAS = CAS = V_IH) I_CC2
–
2
Average V_CC supply current, during RAS-only I_CC3
refresh cycles
-50 ns version
–
80
-60 ns version
–
70
(RAS cycling, CAS = V_IH, t_RC = t_{RC MIN.})
Average V_CC supply current, during hyper page I_CC4
mode (EDO)
-50 ns version
–
35
-60 ns version
–
30
(RAS = V_IL, CAS, address cycling: t_PC = t_{PC MIN.})
Standby V_CC supply current
(RAS = CAS = V_CC – 0.2 V)
I_CC5
–
1
Average V_CC supply current, during CAS-
I_CC6
before-RAS refresh mode
-50 ns version
–
80
-60 ns version
–
70
(RAS, CAS cycling: t_RC = t_{RC MIN.})
Unit Test
Condition
mA ^{2, 3, )4}
mA ^{2, 3, 4}
mA –
mA ^{2, 4}
mA ^{2, 4}
mA ^{2, 3, 4}
mA ^{2, 3, 4}
mA ¹
mA ^{2, 4}
mA ^{2, 4}
Capacitance
T_A = 0 to 70 °C, V_CC = 5 V ± 10 %, f = 1 MHz
Parameter
Input capacitance (A0 to A10)
Input capacitance (RAS, CAS, WE, OE)
I/O capacitance (I/O1 - I/O8)
Symbol
C_I1
C_I2
C_IO
Limit Values
min.
max.
–
5
–
7
–
7
Unit
pF
pF
pF
Semiconductor Group
5
1998-10-01