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HYB5117805BSJ-50-60 Datasheet, PDF (12/23 Pages) Siemens Semiconductor Group – 2M x 8-Bit Dynamic RAM 2k Refresh
HYB 5(3)117805/BSJ-50/-60
2M × 8 EDO-DRAM
VIH
RAS
VIL
VIH
CAS
VIL
VIH
Address
VIL
VIH
WE
VIL
VIH
OE
VIL
I/O
VIH
(Inputs) VIL
I/O
VOH
(Outputs) VOL
t RC
t RAS
t RCD
t CSH
t RSH
t CAS
t ASR
t RAD
t ASC
Row
t RAH
t RAL
t CAH
Column
t CWL
t RWL
t WP
t OEH
t DZO
t DZC
t ODD
t DH
tDS
Valid Data
t CLZ t OEZ
t OEA
Hi Z
"H" or "L"
Write Cycle (OE Controlled Write)
t RP
t CRP
t ASR
Row
Hi Z
SPT03027
Semiconductor Group
12
1998-10-01