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| HYB5117805BSJ-50-60 Datasheet, PDF (20/23 Pages) Siemens Semiconductor Group – 2M x 8-Bit Dynamic RAM 2k Refresh | |||
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HYB 5(3)117805/BSJ-50/-60
2M Ã 8 EDO-DRAM
RAS
CAS
Address
VIH
VIL
VIH
VIL
t ASR
VIH
VIL
t RCD
t RAD
t ASC
t RAH
Row
t WCS
t RC
t RAS
t RSH
t CAH
Column
VIH
WE
VIL
I/O
VIN
(Input) VIL
t WCH
t WP
t DS
t DH
Valid Data
I/O
VOH
(Output) VOL
"H" or "L"
t RC
t RP
t RAS
t RP
t CHR
t CRP
t WRP
t WRH
t ASR
Row
Hi Z
SPT03035
Hidden Refresh Early Write Cycle
Semiconductor Group
20
1998-10-01
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