HYS64V8000GU Datasheet, PDF (7/11 Pages) Siemens Semiconductor Group – 3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module

HYS64(72)V8000GU-10
8M x 64/72 SDRAM-Module
AC Characteristics 1)2)3)
T_A = 0 to 70 °C; V_SS = 0 V; V_CC = 3.3 V ± 0.3 V, t_T = 1 ns
Parameter
Symbol Limit Values Unit
-10
min
max
Clock and Clock Enable
Clock Cycle Time
CAS Latency = 3 t_CK
CAS Latency = 2
Clock Frequency
CAS Latency = 3 _tCK
CAS Latency = 2
Access Time from Clock
CAS Latency = 3 _tAC
CAS Latency = 2
Clock High Pulse Width
t_CH
Clock Low Pulse Width
t_CL
Transition time
t_T
Setup and Hold Times
Command Setup Time
t_CS
Address Setup Time
t_AS
Data In Setup Time
t_DS
CKE Setup Time
t_CKS
Command Hold Time
t_CH
Address Hold Time
t_AH
Data In Hold Time
t_DH
CKE Hold Time
t_CKH
Common Parameters
Row to Column Delay Time
t_RCD
Row Active Time
t_RAS
Row Cycle Time
t_RC
Row Precharge Time
t_RP
10
–
ns
15
–
ns
–
100 MHz
–
66 MHz
–
7
ns 4
–
8
ns
3
–
ns
3
–
ns
0.5
10
ns
2.5
–
ns 5
2.5
–
ns 5
2.5
–
ns 5
2.5
–
ns 5
1
–
ns 5
1
–
ns 5
1
–
ns 5
1
–
ns 5
30
–
ns 6
60
100k
ns 6
90
–
ns 6
30
–
ns 6
Semiconductor Group
7