HYS64V8000GU Datasheet, PDF (6/11 Pages) Siemens Semiconductor Group – 3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module

HYS64(72)V8000GU-10
8M x 64/72 SDRAM-Module
Operating Currents (T_A = 0 to 70^oC, VCC = 3.3V ± 0.3V
(Recommended Operating Conditions unless otherwise noted)
Parameter & Test Condition
Symb.
OPERATING CURRENT
1 bank operation
ICC1
trc=trcmin., tck=tckmin.
Active-precharge command cycling,
without burst operation
PRECHARGE STANDBY
tck = min.
CURRENT in Power Down Mode
CS =VIH (min.), CKE<=Vil(max)
tck = Infinity
PRECHARGE STANDBY
CURRENT in Non-Power Down
Mode
CS = VIH (min.), CKE>=Vih(min)
tck = min.
tck = Infinity
NO OPERATING CURRENT
CKE>=VIh(min.)
ICC2P
ICC2PS
ICC2
ICC2S
ICC3
tck = min., CS = VIH(min),
active state ( max. 4 banks)
BURST OPERATING CURRENT
tck = min.,
Read/Write command cycling
AUTO REFRESH CURRENT
tck = min.,
Auto Refresh command cycling
SELF REFRESH CURRENT
Self Refresh Mode, CKE=0.2V
CKE<=VIl(max.)
(Power down mode)
ICC3P
ICC4
ICC5
ICC6
x64
x72
max.
880
990
24
27
16
18
400
450
40
45
560
64
1240
630
72
1395
1040 1170
16
18
Note
mA 7
mA 7
mA
mA 7
mA
mA
mA
mA 7,8
mA 7
mA
Notes:
7. These parameters depend on the cycle rate and these values are measured by the cycle rate under the
.......minimum value of tck and trc. Input signals are changed one time during tck.
8. These parameter depend on output loading. Specified values are obtained with output open.
Semiconductor Group
6