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HYM322030S Datasheet, PDF (7/9 Pages) Siemens Semiconductor Group – 2M x 32-Bit Dynamic RAM Module | |||
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HYM 322030S/GS-60/-70
2M Ã 32-Bit
AC Characteristics 4) 5)
TA = 0 to 70 ËC, VCC = 5 V ± 10 %, tT = 5 ns
Parameter
Symbol
Limit Values
HYM
322030S/GS-60
HYM
322030S/GS-70
min.
max.
min.
max.
Random read or write cycle time tRC
110
â
Fast page mode cycle time
tPC
40
â
Access time from RAS
t 6) 11) 12)
RAC
â
60
Access time from CAS
t 6) 11)
CAC
â
15
Access time from column
tAA
â
30
address
6) 12)
130
â
45
â
â
70
â
20
â
35
Access time from CAS
tCPA
â
35
â
40
precharge
6)
CAS to output in low-Z
t 6)
CLZ
0
Output buffer turn-off delay
t 7)
OFF
0
Transition time (rise and fall)
t 5)
T
3
RAS precharge time
tRP
40
RAS pulse width
tRAS
60
RAS pulse width
(fast page mode)
tRASP
60
â
0
20
0
50
3
â
50
10000 70
200000 70
â
20
50
â
10000
200000
CAS precharge to RAS delay
tRHCP
35
RAS hold time
tRSH
15
CAS hold time
tCSH
60
CAS pulse width
tCAS
15
RAS to CAS delay time
t 11)
RCD
20
RAS to column address
delay time
tRAD
15
12)
â
40
â
20
â
70
10000 20
45
20
30
15
â
â
â
10000
50
35
CAS to RAS precharge time
tCRP
5
â
CAS precharge time
(fast page mode)
tCP
10
â
5
â
10
â
Row address setup time
tASR
0
â
Row address hold time
tRAH
10
â
Column address setup time
tASC
0
â
Column address hold time
tCAH
15
â
0
â
10
â
0
â
15
â
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Semiconductor Group
567
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