HYM322030S Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – 2M x 32-Bit Dynamic RAM Module

HYM 322030S/GS-60/-70
2M × 32-Bit
The HYM 322030S/GS-60/-70 is a 8 M Byte DRAM module organized as 2 097 152 words by
32-bit in a 72-pin single-in-line package comprising four HYB 5117800BSJ 2M × 8 DRAMs in 400
mil wide SOJ-packages mounted together with four 0.2 µF ceramic decoupling capacitors on a PC
board.
Each HYB 5117800BSJ is described in the data sheet and is fully electrical tested and processed
according to SIEMENS standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.
The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 322030S/GS-60/-70 dictates the use of early write cycles.
Pin Definitions and Functions
Pin No.
A0R-A10R
A0C-A9C
DQ0-DQ31
CAS0 - CAS3
RAS0, RAS2
WE
V_CC
V_SS
PD
N.C.
Function
Row Address Inputs
Column Address Inputs
Data Input/Output
Column Address Strobe
Row Address Strobe
Read/Write Input
Power (+ 5 V)
Ground
Presence Detect Pin
No Connection
Presence Detect Pins
PD0
PD1
PD2
PD3
-60
N.C.
N.C.
N.C.
N.C.
-70
N.C.
N.C.
V_SS
N.C.
Semiconductor Group
562