BSS296 Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

BSS 296
Drain-source on-resistance
R_{DS (on)} = ƒ(T_j)
parameter: I_D = 0.8 A, V_GS = 10 V
2.0
Ω
R_{DS (on)} ^1.6
1.4
1.2
1.0
98%
0.8
typ
0.6
0.4
0.2
0.0
-60
-20
20
60
100 °C 160
T_j
Gate threshold voltage
V_{GS (th)} = ƒ(T_j)
parameter: V_GS = V_DS, I_D = 1 mA
4.6
V
4.0
V_{GS(th) 3.6}
3.2
2.8
2.4
98%
2.0
1.6
typ
1.2
2%
0.8
0.4
0.0
-60
-20
20
60
100 °C 160
T_j
Typ. capacitances
C = f (V_DS)
parameter:V_GS=0V, f = 1 MHz
10 ³
Forward characteristics of reverse diode
I_F = ƒ(V_SD)
parameter: T_j, t_p = 80 µs
10 ¹
pF
C
10 ²
10 ¹
C_iss
C_oss
C_rss
10 ⁰
0
5 10 15 20 25 30 V 40
V_DS
Semiconductor Group
7
A
I_F
10 ⁰
10 ^-1
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
10 ^-2
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V_SD
12/05/1997