BSS296 Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

BSS 296
SIPMOS ^® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V_GS(th) = 0.8...2.0V
Type
BSS 296
Type
BSS 296
V_DS
100 V
I_D
0.8 A
Ordering Code
Q62702-S217
Pin 1
G
Pin 2
D
R_DS(on)
0.8 Ω
Package
TO-92
Marking
SS 296
Tape and Reel Information
E6296
Pin 3
S
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
R_GS = 20 kΩ
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
T_A = 25 °C
DC drain current, pulsed
T_A = 25 °C
Power dissipation
T_A = 25 °C
Symbol
V_DS
V_DGR
V_GS
V_gs
I_D
I_Dpuls
P_tot
Values
Unit
100
V
100
± 14
± 20
A
0.8
3.2
W
1
Semiconductor Group
1
12/05/1997