BSS296 Datasheet, PDF (3/7 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

BSS 296
Electrical Characteristics, at T_j = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V_DS≥ 2 _* I_{D *} R_DS(on)max, I_D = 0.8 A
Input capacitance
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Output capacitance
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Reverse transfer capacitance
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Turn-on delay time
V_DD = 30 V, V_GS = 10 V, I_D = 0.29 A
R_G = 50 Ω
Rise time
V_DD = 30 V, V_GS = 10 V, I_D = 0.29 A
R_G = 50 Ω
Turn-off delay time
V_DD = 30 V, V_GS = 10 V, I_D = 0.29 A
R_G = 50 Ω
Fall time
V_DD = 30 V, V_GS = 10 V, I_D = 0.29 A
R_G = 50 Ω
g_fs
0.5
C_iss
-
C_oss
-
C_rss
-
t_d(on)
-
t_r
-
t_d(off)
-
t_f
-
S
1.2
-
pF
300
400
60
90
30
45
ns
8
12
15
25
120
160
65
85
Semiconductor Group
3
12/05/1997