BSS296 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

BSS 296
Typ. output characteristics
I_D = ƒ(V_DS)
parameter: t_p = 80 µs , T_j = 25 °C
1.8
P_tot =_jiklh1_fgW_e
d
A
I_D
1.4
1.2
1.0
0.8
0.6
0.4
V_GS [V]
a
2.0
c^b
2.5
c
3.0
d
3.5
e
4.0
f
4.5
g
5.0
h
6.0
bⁱ
7.0
j
8.0
k
9.0
l
10.0
0.2
a
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
V_DS
Typ. drain-source on-resistance
R_{DS (on)} = ƒ(I_D)
parameter: t_p = 80 µs, T_j = 25 °C
2.6
Ω_a
b
c
2.2
R_{DS (on) 2.0}
1.8
1.6
1.4
1.2
1.0
d
0.8
0.6
e
lfji ^hg k
0.4 _{VGS [V] =}
0.2
abcdef
2.0 2.5 3.0 3.5 4.0 4.5
0.0
ghi j
5.0 6.0 7.0 8.0
kl
9.0 10.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 A 1.5
I_D
Typ. transfer characteristics I_D = f(V_GS)
parameter: t_p = 80 µs
V_DS≥ 2 x I_D x R_DS(on)max
4.5
A
I_D
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 V 10
V_GS
Typ. forward transconductance g_fs = f (I_D)
parameter: t_p = 80 µs,
V_DS≥2 x I_D x R_DS(on)max
2.0
S
g_fs
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 A 4.0
I_D
Semiconductor Group
6
12/05/1997