BSS296 Datasheet, PDF (2/7 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

BSS 296
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air ¹⁾
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
T_j
T_stg
R_thJA
Values
Unit
-55 ... + 150 °C
-55 ... + 150
≤ 125
K/W
E
55 / 150 / 56
Electrical Characteristics, at T_j = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V_(BR)DSS
V_GS = 0 V, I_D = 0.25 mA, T_j = 25 °C
100
-
Gate threshold voltage
V_GS(th)
V_GS=V_DS, I_D = 1 mA
0.8
1.4
Zero gate voltage drain current
I_DSS
V_DS = 100 V, V_GS = 0 V, T_j = 25 °C
-
0.1
V_DS = 100 V, V_GS = 0 V, T_j = 125 °C
-
8
V_DS = 60 V, V_GS = 0 V, T_j = 25 °C
-
-
Gate-source leakage current
I_GSS
V_GS = 20 V, V_DS = 0 V
-
10
Drain-Source on-state resistance
R_DS(on)
V_GS = 10 V, I_D = 0.8 A
-
0.5
V_GS = 4.5 V, I_D = 0.8 A
-
0.6
V
-
2
1
µA
50
100
nA
nA
100
Ω
0.8
1.4
Semiconductor Group
2
12/05/1997