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C541U Datasheet, PDF (46/63 Pages) Siemens Semiconductor Group – 8 BIT CMOS MICROCONTROLLER
C541U
Power Supply Current
Parameter
Active mode
Idle mode
Power-down mode
12 MHz
12 MHz
Symbol
Limit Values
typ. 8)
max. 9)
IDD
25
30
IDD
15
20
IPD
5
50
Unit Test Condition
mA 4)
mA 5)
µA VDD = 2…5.5 V 3)
Notes :
1) Capacitive loading on ports 0 and 2 may cause spurious noise pulses to be superimposed on the VOL of ALE
and port 3. The noise is due to external bus capacitance discharging into the port 0 and port 2 pins when these
pins make 1-to-0 transitions during bus operation. In the worst case (capacitive loading > 100 pF), the noise
pulse on ALE line may exceed 0.8 V. In such cases it may be desirable to qualify ALE with a schmitt-trigger,
or use an address latch with a schmitt-trigger strobe input.
2) Capacitive loading on ports 0 and 2 may cause the VOH on ALE and PSEN to momentarily fall below the 0.9 VDD
specification when the address lines are stabilizing.
3) IPD (power-down mode) is measured under following conditions:
EA = Port 0 = VDD ; XTAL2 = N.C.; XTAL1 = VSS ; RESET = VSS; all other pins are disconnected.
the USB transceiver is switched off;
4) IDD (active mode) is measured with:
XTAL1 driven with tCLCH , tCHCL = 5 ns , VIL = VSS + 0.5 V, VIH = VDD – 0.5 V; XTAL2 = N.C.;
EA = RESET = Port 0 = Port 1 = VDD ; all other pins are disconnected.
IDD would be slightly higher if a crystal oscillator is used (appr. 1 mA).
5) IDD (idle mode) is measured with all output pins disconnected and with all peripherals disabled;
XTAL1 driven with tCLCH , tCHCL = 5 ns, VIL = VSS + 0.5 V, VIH = VDD – 0.5 V; XTAL2 = N.C.;
EA = RESET = Vss ; Port 0 = VDD ; all other pins are disconnected;
6) Overload conditions under operating conditions occur if the voltage on the respective pin exceeds the specified
operating range (i.e. VOV > VDD + 0.5 V or VOV < VSS - 0.5 V). The absolute sum of input currents on all port
pins may not exceed 50 mA. The supply voltage VDD and VSS must remain within the specified limits.
7) Not 100% tested, guaranteed by design characterization.
8) The typical IDD values are periodically measured at TA = +25 °C but not 100% tested.
9) The maximum IDD values are measured under worst case conditions (TA = 0 °C and VDD = 5.5 V)
Semiconductor Group
44