HYB3164165BT Datasheet, PDF (4/29 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB3164(5/6)165BT(L)-40/-50/-60
4M x 16 EDO-DRAM
TRUTH TABLE
FUNCTION
Standby
Read:Word
Read:Lower Byte
Read:Upper Byte
Write:Word
(Early-Write)
Write:Lower Byte
(Early-Write)
Write:Upper Byte
(Early Write)
Read-Modify-
Write
Hyper Page Mode 1st
Read (Word)
Cycle
RAS LCAS UCAS
H H-X H-X
L
L
H
L
L
H
LH
L
L
L
L
L
L
H
LH
L
L
L
L
L H-L H-L
WE
X
H
H
H
L
L
L
H-L
H
OE ROW
ADDR
XX
L ROW
L ROW
L ROW
X ROW
X ROW
X ROW
L - H ROW
L ROW
COL I/O1-
ADD I/O16
R
X High Impedance
COL Data Out
COL Lower Byte:Data Out
Upper-Byte:High-Z
COL Lower Byte:High-Z
Upper Byte:Data Out
COL Data In
COL Lower Byte:Data Out
Upper-Byte:High-Z
COL Lower Byte:High-Z
Upper Byte:Data Out
COL Data Out, Data In
COL Data Out
Hyper Page Mode 2nd L H - L H - L H
Read (Word)
Cycle
L n/a COL Data Out
Hyper Page Mode 1st
L H-L H-L
L
Early Write(Word) Cycle
X ROW COL Data In
Hyper Page Mode 2nd L H - L H - L
L
Early Write(Word) Cycle
X n/a COL Data In
Hyper Page Mode 1st
L H - L H - L H - L L - H ROW COL Data Out, Data In
RMW
Cycle
Hyper Page Mode 2st
L H - L H - L H - L L - H n/a COL Data Out, Data In
RMW
Cycle
RAS only refresh
CAS-before-RAS
refresh
Test Mode Entry
Hidden Refresh
(Read)
Hidden Refresh
(Write)
Self Refresh
(L-version only)
LH
H
X
X ROW n/a High Impedance
H-L L
L
H
X
X
n/a High Impedance
H-L L
L
L
X
X
n/a High Impedance
L-H- L
L
H
L ROW COL Data Out
L
L-H- L
L
L
X ROW COL Data In
L
H-L L
H
X
X
X
X High Impedance
Semiconductor Group
4