HYB3164165BT Datasheet, PDF (12/29 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB3164(5/6)165BT(L)-40/-50/-60
4M x 16 EDO-DRAM
AC Characteristics (cont’d) ⁵⁾⁶⁾
T_A = 0 to 70 °C,V_CC = 3.3 V ± 0.3V , t_T = 2 ns
AC64-2E
Parameter
Symbol
- 40
Limit Values
- 50
- 60
Unit Note
min. max. min. max. min. max.
RAS pulse width in hyper page mode t_RAS
CAS precharge to RAS Delay
t_RHPC
OE pulse width
t_OEP
OE hold time from CAS high
t_OEHC
Output buffer turn-off delay from WE t_WEZ
OE setup time prior to CAS
t_OES
40 200k 50 200k 60 200k ns
22 – 27 – 32 – ns
5 – 5 – 5 – ns
5 – 5 – 5 – ns
0 10 0 13 0 15 ns
5 – 5 – 5 – ns
Hyper Page Mode (EDO) Read-
modify-Write Cycle
Hyper page mode (EDO) read-write t_PRWC
cycle time
44 – 54 – 63 – ns
CAS precharge to WE
t_CPWD 34 – 42 – 49 – ns
CAS before RAS Refresh Cycle
CAS setup time
t_CSR
CAS hold time
t_CHR
RAS to CAS precharge time
t_RPC
Write to RAS precharge time
t_WRP
Write hold time referenced to RAS t_WRH
5 – 5 – 5 – ns
5 – 5 – 10 – ns
5 – 5 – 5 – ns
5 – 5 – 10 – ns
5 – 5 – 10 – ns
Self Refresh Cycle (L-versions only)
RAS pulse width
RAS precharge time
CAS hold time
t_RASS
t_RPS
t_CHS
100k
100k _ 100k _
69 – 84 – 104 –
-50 – -50 – -50 –
ns 17
ns 17
ns 17
Semiconductor Group
12