HYB3164165BT Datasheet, PDF (21/29 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB3164(5/6)165BT(L)-40/-50/-60
4M x 16 EDO-DRAM
V
IH
RAS
VIL
tRCD
tCRP
V
IH
UCAS
LCAS
VIL
tCSH
tRAS
tHPC
tCAS
tCP
t
CAS
tRHCP
tRSH
tCAS
tRAL
Address
tASR ^{tRAH tASC tCAH}
V
IH
VIL
Row
Addr
Column 1
tRAD
tCWL
tASC tCAH
Column 2
t_CWL
VIH
WE
VIL
tWCS
tWCH ^tWCS
tWP
tWCH
tWP
tASC tCAH
Column N
tWCS
tRWL
t_CWL
tWCH
tWP
tRP
tCRP
V
OH
OE
VOL
V
IH
I/O (Input) _VIL
tDS
tDH
Data In 1
“H” or “L”
tDS t_DH
Data In 2
tDS tDH
Data In N
WL8
Hyper Page Mode (EDO) Early Write Cycle
Semiconductor Group
21