HYB3164165BT Datasheet, PDF (11/29 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB3164(5/6)165BT(L)-40/-50/-60
4M x 16 EDO-DRAM
AC Characteristics (cont’d) ⁵⁾⁶⁾
T_A = 0 to 70 °C,V_CC = 3.3 V ± 0.3V , t_T = 2 ns
AC64-2E
Parameter
Symbol
- 40
Limit Values
- 50
- 60
Unit Note
min. max. min. max. min. max.
Read command hold time
referenced to RAS
t_RRH
0 – 0 – 0 – ns 11
CAS to output in low-Z
t_CLZ
Output buffer turn-off delay
t_OFF
Output buffer turn-off delay from OE t_OEZ
Data to CAS low delay
t_DZC
Data to OE low delay
t_DZO
CAS high to data delay
t_CDD
OE high to data delay
t_ODD
0 – 0 – 0 – ns 8
0 10 0 13 0 15 ns 12
0 10 0 13 0 15 ns 12
0 – 0 – 0 – ns 13
0 – 0 – 0 – ns 13
10 – 13 – 15 – ns 14
10 – 13 – 15 – ns 14
Write Cycle
Write command hold time
t_WCH
Write command pulse width
t_WP
Write command setup time
t_WCS
Write command to RAS lead time t_RWL
Write command to CAS lead time t_CWL
Data setup time
t_DS
Data hold time
t_DH
5 – 7 – 10 – ns
5 – 7 – 10 – ns
0 – 0 – 0 – ns 15
6 – 8 – 10 – ns
6 – 8 – 10 – ns
0 – 0 – 0 – ns 16
5 – 7 – 10 – ns 16
Read-modify-Write Cycle
Read-write cycle time
t_RWC
RAS to WE delay time
t_RWD
CAS to WE delay time
t_CWD
Column address to WE delay time t_AWD
OE command hold time
t_OEH
89 – 109 – 133 – ns
52 – 65 – 77 – ns 15
22 – 28 – 32 – ns 15
32 – 40 – 47 – ns 15
5 – 7 – 10 – ns
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle time t_HPC
Access time from CAS precharge t_CPA
Output data hold time
t_COH
16 – 20 – 24 – ns
– 22 – 27 – 32 ns 7
3 – 5 – 5 – ns
Semiconductor Group
11