HYB3164165BT Datasheet, PDF (1/29 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

4M x 16-Bit Dynamic RAM
(8k, 4k & 2k Refresh, EDO-version)
Preliminary Information
HYB 3164165BT(L) -40/-50/-60
HYB 3165165BT(L) -40/-50/-60
HYB 3166165BT(L) -40/-50/-60
• 4 194 304 words by 16-bit organization
• 0 to 70 °C operating temperature
• Hyper Page Mode - EDO - operation
• Performance:
-40 -50 -60
t_RAC RAS access time
40
t_CAC CAS access time
10
t_AA Access time from address 20
t_RC Read/write cycle time
69
t_HPC Hyper page mode (EDO)
16
cycle time
50
60 ns
13
15 ns
25
30 ns
84 104 ns
20
25 ns
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
-40
-50
-60
HYB3166165BT(L)
864
702
558 mW
HYB3165165BT(L)
486
396
324 mW
HYB3164165BT(L)
306
252
216 mW
7.2 mW standby (TTL)
3.6 mW standby (MOS)
720 µA standby for L-version
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and Self Refresh (L-version only
• 2 CAS / 1 WE byte control
• 8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164165BT)
4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HYB 3165165BT)
2048 refresh cycles/ 32 ms , 11 R/ 11C addresses (HYB 3166165BT)
• 128 ms refresh period for L-versions
• Plastic Package: P-TSOPII-50 400 mil
Semiconductor Group
1
12.97