HYB3164160AT Datasheet, PDF (4/26 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

TRUTH TABLE
HYB3164(5/6)160AT(L)-40/-50/-60
4M x 16-DRAM
FUNCTION
RAS LCAS UCAS
Standby
Read:Word
Read:Lower Byte
H H-X H-X
L
L
H
L
L
H
Read:Upper Byte
L
H
L
Write:Word
(Early-Write)
Write:Lower Byte
(Early-Write)
Write:Upper Byte
(Early Write)
Read-Modify-
Write
Fast Page Mode 1st
Read (Word)
Cycle
Fast Page Mode 2nd
Read (Word)
Cycle
Fast Page Mode 1st
Early Write(Word) Cycle
Fast Page Mode 2nd
Early Write(Word) Cycle
Fast Page Mode 1st
RMW
Cycle
Fast Page Mode 2st
RMW
Cycle
RAS only refresh
CAS-before-RAS
refresh
Test Mode Entry
Hidden Refresh
(Read)
Hidden Refresh
(Write)
L
L
L
L
L
L
L
L
L
L
L
H-L
H-L
L-H-
L
L-H-
L
L
L
H
L
H-L
H-L
H-L
H-L
H-L
H-L
H
L
L
L
L
L
H
L
L
H-L
H-L
H-L
H-L
H-L
H-L
H
L
L
L
L
WE
X
H
H
H
L
L
L
H-L
H
H
L
L
H-L
H-L
X
H
L
H
L
OE ROW COL
ADD ADD
I/O1-
I/O16
X
X
X
High Impedance
L ROW COL
Data Out
L ROW COL Lower Byte:Data Out
Upper-Byte:High-Z
L ROW COL Lower Byte:High-Z
Upper Byte:Data Out
X ROW COL
Data In
X
X
L-H
ROW
ROW
ROW
COL
COL
COL
Lower Byte:Data Out
Upper-Byte:High-Z
Lower Byte:High-Z
Upper Byte:Data Out
Data Out, Data In
L ROW COL
Data Out
L
n/a COL
Data Out
X ROW COL
Data In
X
n/a COL
Data In
L - H ROW COL Data Out, Data In
L - H n/a COL Data Out, Data In
X ROW n/a
X
X
n/a
High Impedance
High Impedance
X
X
n/a
L ROW COL
High Impedance
Data Out
X ROW COL
Data In
Semiconductor Group
4