HYB3164160AT Datasheet, PDF (1/26 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

4M x 16-Bit Dynamic RAM
( 8k, 4k & 2k Refresh)
Advanced Information
• 4 194 304 words by 16-bit organization
HYB 3164160AT(L) -40/-50/-60
HYB 3165160AT(L) -40/-50/-60
HYB 3166160AT(L) -40/-50/-60
• 0 to 70 °C operating temperature
• Fast Page Mode operation
• Performance:
-40 -50 -60
t_RAC RAS access time
40
50
60
ns
t_CAC CAS access time
10
13
15
ns
t_AA Access time from address 20
25
30
ns
t_RC Read/write cycle time
75
90
110 ns
t_PC Fast page mode cycle time 30
35
40
ns
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
HYB3166160AT(L)
HYB3165160AT(L)
HYB3164160AT(L)
-40
-50
-60
900
558
396 mW
756
468
324 mW
612
378
270 mW
7.2 mW standby (TTL)
3.24 mW standby (MOS)
720 µW standby for L-version
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh and self refresh (L-version only)
• 2 CAS / 1 WE byte control
• 8192 refresh cycles /128 ms , 13 R/ 9C addresses (HYB 3164160AT)
4096 refresh cycles / 64 ms , 12 R/ 10C addresses (HYB 3165160AT)
2048 refresh cycles / 32 ms , 11 R/ 11C addresses (HYB 3166160AT)
• 256 msec refresh period for L-versions
• Plastic Package: P-TSOPII-50 400 mil
Semiconductor Group
1
6.97