HYB3164160AT Datasheet, PDF (12/26 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB3164(5/6)160AT(L)-40/-50/-60
4M x 16-DRAM
AC Characteristics (cont’d)(note: 6,7,8)
T_A = 0 to 70 °C,V_CC = 3.3 ± 0.3V
AC64-2F
Parameter
Symbol
-40
-50
-60
Unit Note
min. max. min. max. min. max.
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle t_PRWC 60 –
71 –
80 –
ns
time
CAS precharge to WE
t_CPWD 40 –
48 –
55 –
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t_CSR
5
–
5
–
5
–
ns
CAS hold time
t_CHR
5
–
5
–
10 –
ns
RAS to CAS precharge time
t_RPC
0
–
0
–
0
–
ns
Write to RAS precharge time
t_WRP
5
–
5
–
10 –
ns
Write hold time referenced to RAS t_WRH 5
–
5
–
10 –
ns
Self Refresh Cycle (L-version only)
RAS pulse width
RAS precharge time
CAS hold time
t_RASS
t_RPS
t_CHS
100k –
75 –
-50 –
100k –
90 –
-50 –
100k –
110 –
-50 –
Capacitance
T_A = 0 to 70 °C,V_CC = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Input capacitance (A0 to A11,A12)
Input capacitance (RAS, CAS, WE, OE)
I/O capacitance (I/O1-I/O8)
Symbol
C_I1
C_I2
C_IO
Limit Values
min.
max.
–
5
–
7
–
7
ns 17
ns 17
ns 17
Unit
pF
pF
pF
Semiconductor Group
12