HYB3164160AT Datasheet, PDF (11/26 Pages) Siemens Semiconductor Group – 4M x 16-Bit Dynamic RAM

HYB3164(5/6)160AT(L)-40/-50/-60
4M x 16-DRAM
AC Characteristics (cont’d)(note: 6,7,8)
T_A = 0 to 70 °C,V_CC = 3.3 ± 0.3V
AC64-2F
Parameter
Symbol
-40
-50
-60
Unit Note
min. max. min. max. min. max.
CAS to output in low-Z
t_CLZ
0
–
0
–
0
–
ns 8
Output buffer turn-off delay
t_OFF
–
10 –
13 –
15 ns 12
Output buffer turn-off delay from t_OEZ
–
10 –
13 –
15 ns 12
OE
Data to OE low delay
CAS high to data delay
OE high to data delay
t_DZO
t_CDD
t_ODD
0
–
10 –
10 –
0
–
13 –
13 –
0
–
15 –
15 –
ns 13
ns 14
ns 14
Write Cycle
Write command hold time
t_WCH
Write command pulse width
t_WP
Write command setup time
t_WCS
Write command to RAS lead time t_RWL
Write command to CAS lead time t_CWL
Data setup time
t_DS
Data hold time
t_DH
CAS delay time from Din
t_DZC
5
–
5
–
0
–
10 –
10 –
0
–
5
–
0
–
7
–
7
–
0
–
13 –
13 –
0
–
7
–
0
–
10 –
10 –
0
–
15 –
15 –
0
–
10 –
0
–
ns
ns
ns 15
ns
ns
ns 16
ns 16
ns 13
Read-Modify-Write Cycle
Read-write cycle time
t_{R WC}
RAS to WE delay time
t_{R WD}
CAS to WE delay time
t_{C WD}
Column address to WE delay time t_AWD
OE command hold time
t_OEH
105 –
55 –
25 –
35 –
5
–
126 –
68 –
31 –
43 –
7
–
150 –
80 –
35 –
50 –
10 –
ns
ns 15
ns 15
ns 15
ns
Fast Page Mode Cycle
Fast page mode cycle time
t_PC
30
Access time from CAS precharge t_CPA
–
RAS pulse width
t_RAS
40
CAS precharge to RAS Delay
t_RHPC 25
– 35
25 –
200k 50
– 30
– 40
30 –
200k 60
– 35
– ns
35 ns 8
200k ns
– ns
Semiconductor Group
11