BFQ82 Datasheet, PDF (2/18 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)

BFQ 82
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
VCB = 10 V, IE = 0, TA = 125 ˚C
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 5 mA, VCE = 8 V
IC = 30 mA, VCE = 8 V
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 12
ICES
–
ICB0
–
–
IEB0
–
hFE
–
50
–
–
V
–
100 µA
–
0.05
–
5
–
1
–
110 –
120 250