BFQ82 Datasheet, PDF (17/18 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)

BFQ 82
Common Emitter S Parameters (continued)
f
GHz
S11
MAG
ANG
S21
MAG
ANG
IC = 50 mA, VCE = 8 V, Z0 = 50 Ω
0.10
0.548 – 120.2 39.95
0.15
0.582 – 139.4 29.82
0.20
0.599 – 150.9 23.47
0.25
0.610 – 158.0 19.26
0.30
0.616 – 163.4 16.29
0.40
0.621 – 171.5 12.41
0.50
0.625 – 177.3 10.01
0.60
0.629
178.2 8.39
0.70
0.632
174.6 7.20
0.80
0.636
171.1 6.32
0.90
0.640
168.1 5.62
1.00
0.644
165.1 5.05
1.20
0.652
159.2 4.21
1.40
0.657
153.8 3.63
1.50
0.653
151.6 3.41
1.60
0.655
149.0 3.21
1.80
0.663
144.5 2.85
2.00
0.670
140.8 2.56
2.50
0.700
131.2 2.08
3.00
0.704
119.6 1.77
124.5
113.2
106.0
101.1
97.3
91.4
86.9
83.0
79.4
76.2
73.1
70.3
65.2
60.4
57.8
55.1
49.9
45.1
35.3
22.7
S12
MAG
0.017
0.020
0.023
0.026
0.028
0.033
0.039
0.045
0.050
0.056
0.062
0.067
0.079
0.091
0.097
0.103
0.115
0.125
0.153
0.178
ANG
53.4
50.0
50.2
51.5
53.1
55.7
57.7
58.9
59.7
59.9
59.9
59.7
58.9
57.5
56.6
55.5
53.0
50.8
45.6
38.6
S22
MAG
ANG
0.569
0.434
0.351
0.296
0.259
0.213
0.186
0.171
0.162
0.155
0.151
0.147
0.142
0.138
0.138
0.139
0.145
0.151
0.169
0.193
– 60.7
– 75.0
– 85.2
– 93.2
– 99.9
– 110.7
– 119.1
– 125.6
– 131.4
– 136.2
– 140.8
– 145.6
– 153.4
– 159.4
– 161.1
– 162.8
– 166.7
– 172.7
176.0
169.8
S11, S22 = f (f)
IC = 50 mA, VCE = 8 V, Z0 = 50 Ω
S12, S21 = f (f)
IC = 50 mA, VCE = 8 V, Z0 = 50 Ω