BFQ82 Datasheet, PDF (11/18 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)

BFQ 82
Common Emitter S Parameters (continued)
f
GHz
S11
MAG
ANG
S21
MAG
ANG
IC = 10 mA, VCE = 5 V, Z0 = 50 Ω
0.10
0.670
– 68.9 23.03
0.15
0.664
– 92.4 19.59
0.20
0.661 – 109.9 16.65
0.25
0.660 – 122.6 14.30
0.30
0.660 – 132.6 12.45
0.40
0.658 – 147.1 9.79
0.50
0.660 – 157.1 8.04
0.60
0.662 – 164.9 6.80
0.70
0.664 – 171.0 5.88
0.80
0.669 – 176.3 5.17
0.90
0.672
179.2 4.62
1.00
0.675
175.0 4.16
1.20
0.682
167.4 3.48
1.40
0.687
160.9 3.00
1.50
0.684
158.2 2.82
1.60
0.684
155.1 2.65
1.80
0.693
149.8 2.37
2.00
0.701
144.9 2.13
2.50
0.732
134.5 1.73
3.00
0.735
122.0 1.47
143.5
131.0
121.7
114.5
108.9
100.3
93.9
88.6
83.9
79.8
76.0
72.5
66.2
60.5
57.7
54.7
48.8
43.6
32.6
19.2
S12
MAG
0.028
0.037
0.042
0.045
0.048
0.052
0.055
0.058
0.061
0.064
0.067
0.070
0.076
0.084
0.088
0.092
0.101
0.108
0.132
0.156
ANG
60.6
51.4
45.5
41.6
39.1
36.6
35.8
36.1
36.8
37.4
38.4
39.2
40.8
41.9
42.5
42.6
42.6
42.2
41.4
37.4
S22
MAG
ANG
0.822
0.705
0.604
0.525
0.462
0.376
0.319
0.283
0.256
0.237
0.222
0.209
0.191
0.182
0.181
0.180
0.181
0.179
0.188
0.215
– 32.5
– 43.2
– 51.1
– 56.7
– 60.9
– 66.9
– 70.8
– 73.9
– 76.4
– 78.5
– 80.8
– 83.1
– 87.2
– 91.0
– 93.2
– 95.5
– 101.1
– 107.6
– 124.6
– 139.6
S11, S22 = f (f)
IC = 10 mA, VCE = 5 V, Z0 = 50 Ω
S12, S21 = f (f)
IC = 10 mA, VCE = 5 V, Z0 = 50 Ω